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DMN30H4D0L-13

300V|250mA (Ta)|310mW (Ta)
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MOSFET N-CH 300V .25A SOT23

Specifications

Brand
Diodes Incorporated
Package
SOT-23
Packaging
—
Weight
—

Total Inventory

106pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how DMN30H4D0L-13 from Diodes Incorporated fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerDiodes Incorporated
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)300V
Current - Continuous Drain (Id) @ 25°C250mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)2.7V, 10V
Rds On (Max) @ Id, Vgs4Ohm @ 300mA, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs7.6nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds187.3pF @ 25V
FET Feature-
Power Dissipation (Max)310mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSOT-23
Package / CaseTO-236-3, SC-59, SOT-23-3

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Datasheet & Documents

dmn30h4d0l-13.pdf

PDF Document · 6 pages

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