Heisener Electronics
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DMN3065LW-7

30V|4A (Ta)|770mW (Ta)
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MOSFET N-CH 30V 4A SOT-323

Specifications

Brand
Diodes Incorporated
Package
SOT-323
Packaging
—
Weight
—

Total Inventory

258,433pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how DMN3065LW-7 from Diodes Incorporated fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerDiodes Incorporated
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 10V
Rds On (Max) @ Id, Vgs52mOhm @ 4A, 10V
Vgs(th) (Max) @ Id1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs11.7nC @ 10V
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds465pF @ 15V
FET Feature-
Power Dissipation (Max)770mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSOT-323
Package / CaseSC-70, SOT-323

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Datasheet & Documents

dmn3065lw-13.pdf

PDF Document · 5 pages

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Datasheet Preview

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