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30 V|5.4A (Ta)|800mW
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MOSFET BVDSS: 8V~24V SOT23 T&R 3
Specifications
- Brand
- Diodes Incorporated
- Package
- SOT-23-3
- Packaging
- —
- Weight
- —
Total Inventory
0pcs
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MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how DMN3032LQ-7 from Diodes Incorporated fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
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Technical Specifications
| Manufacturer | Diodes Incorporated | |
| Series | - | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 30 V | |
| Current - Continuous Drain (Id) @ 25°C | 5.4A (Ta) | |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Rds On (Max) @ Id, Vgs | 31mOhm @ 5.8A, 10V | |
| Vgs(th) (Max) @ Id | 2V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 10.1 nC @ 10 V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 481 pF @ 15 V | |
| FET Feature | - | |
| Power Dissipation (Max) | 800mW | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | SOT-23-3 | |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
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Interface
