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30V|5.6A (Ta)|1.8W (Ta)
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MOSFET N-CH 30V 5.6A SOT223
Specifications
- Brand
- Diodes Incorporated
- Package
- SOT-223
- Packaging
- —
- Weight
- —
Total Inventory
3,287pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how DMN3032LE-13 from Diodes Incorporated fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Diodes Incorporated | |
| Series | - | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 30V | |
| Current - Continuous Drain (Id) @ 25°C | 5.6A (Ta) | |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Rds On (Max) @ Id, Vgs | 29mOhm @ 3.2A, 10V | |
| Vgs(th) (Max) @ Id | 2V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 11.3nC @ 10V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 498pF @ 15V | |
| FET Feature | - | |
| Power Dissipation (Max) | 1.8W (Ta) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | SOT-223 | |
| Package / Case | TO-261-4, TO-261AA |
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Datasheet & Documents
dmn3032le-13.pdf
PDF Document · 6 pages
