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30 V|5.3A (Ta)|1W (Ta)
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MOSFET N-CH 30V 5.3A PWRDI333-8
Specifications
- Brand
- Diodes Incorporated
- Package
- POWERDI3333-8
- Packaging
- —
- Weight
- —
Total Inventory
0pcs
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MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how DMN3029LFG-13 from Diodes Incorporated fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Diodes Incorporated | |
| Series | - | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 30 V | |
| Current - Continuous Drain (Id) @ 25°C | 5.3A (Ta) | |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Rds On (Max) @ Id, Vgs | 18.6mOhm @ 10A, 10V | |
| Vgs(th) (Max) @ Id | 1.8V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 11.3 nC @ 10 V | |
| Vgs (Max) | ±25V | |
| Input Capacitance (Ciss) (Max) @ Vds | 580 pF @ 15 V | |
| FET Feature | - | |
| Power Dissipation (Max) | 1W (Ta) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | POWERDI3333-8 | |
| Package / Case | 8-PowerVDFN |
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