Heisener Electronics
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DMN3018SFGQ-7

30V|8.5A (Ta)|1W (Ta)
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MOSFET NCH 30V 8.5A POWERDI

Specifications

Brand
Diodes Incorporated
Package
PowerDI3333-8
Packaging
—
Weight
—

Total Inventory

347pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how DMN3018SFGQ-7 from Diodes Incorporated fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerDiodes Incorporated
SeriesAutomotive, AEC-Q101
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C8.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs21mOhm @ 10A, 10V
Vgs(th) (Max) @ Id2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs13.2nC @ 10V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds697pF @ 15V
FET Feature-
Power Dissipation (Max)1W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerDI3333-8
Package / Case8-PowerVDFN

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Datasheet & Documents

dmn3018sfgq-7.pdf

PDF Document · 6 pages

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