Heisener Electronics
BOM

DMN3016LK3-13

30V|12.4A (Ta)|1.6W (Ta)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

MOSFET N-CH 30V 12.4A TO252

Specifications

Brand
Diodes Incorporated
Package
TO-252
Packaging
—
Weight
—

Total Inventory

336pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how DMN3016LK3-13 from Diodes Incorporated fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerDiodes Incorporated
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C12.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs12mOhm @ 11A, 10V
Vgs(th) (Max) @ Id2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs25.1nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1415pF @ 15V
FET Feature-
Power Dissipation (Max)1.6W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-252
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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Datasheet & Documents

dmn3016lk3-13.pdf

PDF Document · 7 pages

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