Heisener Electronics
BOM

DMN3015LSD-13

30V|8.4A (Ta)|1.2W
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

MOSFET 2N-CH 30V 8.4A 8SO

Specifications

Brand
Diodes Incorporated
Package
8-SOIC (0.154", 3.90mm Width)
Packaging
—
Weight
—

Total Inventory

413pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how DMN3015LSD-13 from Diodes Incorporated fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerDiodes Incorporated
Series-
FET Type2 N-Channel (Dual)
FET FeatureStandard
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C8.4A (Ta)
Rds On (Max) @ Id, Vgs15mOhm @ 12A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs25.1nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds1415pF @ 15V
Power - Max1.2W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SO

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Datasheet & Documents

dmn3015lsd-13.pdf

PDF Document · 6 pages

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