Heisener Electronics
BOM

DMN3012LDG-13

30V|10A (Ta), 20A (Tc)|2.2W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

MOSFET BVDSS: 25V-30V POWERDI333

Specifications

Brand
Diodes Incorporated
Package
8-PowerLDFN
Packaging
—
Weight
—

Total Inventory

484pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how DMN3012LDG-13 from Diodes Incorporated fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerDiodes Incorporated
Series-
FET Type2 N-Channel (Dual)
FET FeatureStandard
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C10A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs12mOhm @ 15A, 5V, 6mOhm @ 15A, 5V
Vgs(th) (Max) @ Id2.1V @ 250µA, 1.15V @ 250µA
Gate Charge (Qg) (Max) @ Vgs6.1nC @ 4.5V, 12.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds850pF @ 15V, 1480pF @ 15V
Power - Max2.2W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-PowerLDFN
Supplier Device PackagePowerDI3333-8 (Type D)

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