DMN21D2UFB-7
20 V|760mA (Ta)|380mW (Ta)
原装正品全球货源快速交付品质认证技术支持批量优惠
MOSFET BVDSS: 8V~24V X1-DFN1006-
规格参数
- 品牌
- Diodes Incorporated
- 封装
- X1-DFN1006-3
- 包装方式
- —
库存总量
9,000个
12小时发货
起订量：1 个
认证与授权
产品视频
了解 Diodes Incorporated 的 DMN21D2UFB-7 如何融入您的设计。我们的元件专家将介绍关键规格、品质认证及典型应用场景。
- 原厂采购，全程可追溯
- 严格的进料品质检验
- 具竞争力的价格 & 全球快速交货
- 专属应用工程技术支持
技术规格
| Manufacturer | Diodes Incorporated | |
| Series | - | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 20 V | |
| Current - Continuous Drain (Id) @ 25°C | 760mA (Ta) | |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V | |
| Rds On (Max) @ Id, Vgs | 990mOhm @ 100mA, 4.5V | |
| Vgs(th) (Max) @ Id | 1V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 0.93 nC @ 10 V | |
| Vgs (Max) | ±12V | |
| Input Capacitance (Ciss) (Max) @ Vds | 27.6 pF @ 16 V | |
| FET Feature | - | |
| Power Dissipation (Max) | 380mW (Ta) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | X1-DFN1006-3 | |
| Package / Case | 3-UFDFN |
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