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20 V|6A (Ta)|800mW (Ta)
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MOSFET BVDSS: 8V~24V SOT23 T&R 3
Specifications
- Brand
- Diodes Incorporated
- Package
- SOT-23-3
- Packaging
- —
- Weight
- —
Total Inventory
0pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how DMN2040UQ-7 from Diodes Incorporated fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
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Technical Specifications
| Manufacturer | Diodes Incorporated | |
| Series | - | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 20 V | |
| Current - Continuous Drain (Id) @ 25°C | 6A (Ta) | |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V | |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 8.2A, 4.5V | |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 7.5 nC @ 4.5 V | |
| Vgs (Max) | ±12V | |
| Input Capacitance (Ciss) (Max) @ Vds | 667 pF @ 10 V | |
| FET Feature | - | |
| Power Dissipation (Max) | 800mW (Ta) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | SOT-23-3 | |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
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PROTOTYPE
