Heisener Electronics
BOM

DMN2024UFX-7

20V|8A (Tc)|920mW
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

MOSFET 2N-CH 20V 8A 4VDFN

Specifications

Brand
Diodes Incorporated
Package
4-VFDFN Exposed Pad
Packaging
—
Weight
—

Total Inventory

0pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how DMN2024UFX-7 from Diodes Incorporated fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerDiodes Incorporated
Series-
FET TypeMOSFET (Metal Oxide)
FET Feature-
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C8A (Tc)
Rds On (Max) @ Id, Vgs22mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs14.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds647pF @ 10V
Power - Max920mW
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case4-VFDFN Exposed Pad
Supplier Device PackageV-DFN2050-4

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