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20V|8A (Tc)|920mW
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MOSFET 2N-CH 20V 8A 4VDFN
Specifications
- Brand
- Diodes Incorporated
- Package
- 4-VFDFN Exposed Pad
- Packaging
- —
- Weight
- —
Total Inventory
0pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how DMN2024UFX-7 from Diodes Incorporated fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Diodes Incorporated | |
| Series | - | |
| FET Type | MOSFET (Metal Oxide) | |
| FET Feature | - | |
| Drain to Source Voltage (Vdss) | 20V | |
| Current - Continuous Drain (Id) @ 25°C | 8A (Tc) | |
| Rds On (Max) @ Id, Vgs | 22mOhm @ 4A, 4.5V | |
| Vgs(th) (Max) @ Id | 1V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 14.8nC @ 10V | |
| Input Capacitance (Ciss) (Max) @ Vds | 647pF @ 10V | |
| Power - Max | 920mW | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Package / Case | 4-VFDFN Exposed Pad | |
| Supplier Device Package | V-DFN2050-4 |
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