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20V|10.7A (Ta)|1.2W
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MOSFET 2 N-CH 20V POWERDI3333-8
Specifications
- Brand
- Diodes Incorporated
- Package
- 8-PowerVDFN
- Packaging
- —
- Weight
- —
Total Inventory
440pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how DMN2022UNS-7 from Diodes Incorporated fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Diodes Incorporated | |
| Series | - | |
| FET Type | 2 N-Channel (Dual) Common Drain | |
| FET Feature | Standard | |
| Drain to Source Voltage (Vdss) | 20V | |
| Current - Continuous Drain (Id) @ 25°C | 10.7A (Ta) | |
| Rds On (Max) @ Id, Vgs | 10.8mOhm @ 4A, 4.5V | |
| Vgs(th) (Max) @ Id | 1V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 20.3nC @ 4.5V | |
| Input Capacitance (Ciss) (Max) @ Vds | 1870pF @ 10V | |
| Power - Max | 1.2W | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Package / Case | 8-PowerVDFN | |
| Supplier Device Package | PowerDI3333-8 |
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Datasheet & Documents
dmn2022uns-13.pdf
PDF Document · 7 pages
