Heisener Electronics
BOM

DMN2016UTS-13

20V|8.58A|880mW
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

MOSFET 2N-CH 20V 8.58A 8-TSSOP

Specifications

Brand
Diodes Incorporated
Package
8-TSSOP (0.173", 4.40mm Width)
Packaging
—
Weight
—

Total Inventory

46,807pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how DMN2016UTS-13 from Diodes Incorporated fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
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  • Dedicated application engineering support

Technical Specifications

ManufacturerDiodes Incorporated
Series-
FET Type2 N-Channel (Dual) Common Drain
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C8.58A
Rds On (Max) @ Id, Vgs14.5mOhm @ 9.4A, 4.5V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs16.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds1495pF @ 10V
Power - Max880mW
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package8-TSSOP

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Datasheet & Documents

dmn2016uts-13.pdf

PDF Document · 6 pages

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