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20V|9A|800mW
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MOSFET 2N-CH 20V 9A 6-UDFN
Specifications
- Brand
- Diodes Incorporated
- Package
- 6-UFDFN Exposed Pad
- Packaging
- —
- Weight
- —
Total Inventory
4,712pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how DMN2014LHAB-7 from Diodes Incorporated fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Diodes Incorporated | |
| Series | - | |
| FET Type | 2 N-Channel (Dual) | |
| FET Feature | Logic Level Gate | |
| Drain to Source Voltage (Vdss) | 20V | |
| Current - Continuous Drain (Id) @ 25°C | 9A | |
| Rds On (Max) @ Id, Vgs | 13mOhm @ 4A, 4.5V | |
| Vgs(th) (Max) @ Id | 1.1V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 16nC @ 4.5V | |
| Input Capacitance (Ciss) (Max) @ Vds | 1550pF @ 10V | |
| Power - Max | 800mW | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Package / Case | 6-UFDFN Exposed Pad | |
| Supplier Device Package | U-DFN2030-6 (Type B) |
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Datasheet & Documents
dmn2014lhab-7.pdf
PDF Document · 6 pages
