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20V|12.2A (Ta)|2.1W
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MOSFET 2N-CH 20V 12.2A DFN2050-4
Specifications
- Brand
- Diodes Incorporated
- Package
- 4-VFDFN Exposed Pad
- Packaging
- —
- Weight
- —
Total Inventory
11,511pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how DMN2011UFX-7 from Diodes Incorporated fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Diodes Incorporated | |
| Series | - | |
| FET Type | 2 N-Channel (Dual) | |
| FET Feature | Standard | |
| Drain to Source Voltage (Vdss) | 20V | |
| Current - Continuous Drain (Id) @ 25°C | 12.2A (Ta) | |
| Rds On (Max) @ Id, Vgs | 9.5mOhm @ 10A, 4.5V | |
| Vgs(th) (Max) @ Id | 1V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 56nC @ 10V | |
| Input Capacitance (Ciss) (Max) @ Vds | 2248pF @ 10V | |
| Power - Max | 2.1W | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Package / Case | 4-VFDFN Exposed Pad | |
| Supplier Device Package | V-DFN2050-4 |
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Datasheet & Documents
dmn2011ufx-7.pdf
PDF Document · 7 pages
