Heisener Electronics
BOM

DMN2011UFDF-13

20V|14.2A (Ta)|2.1W (Ta)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

MOSFET N-CH 20V 14.2A UDFN2020-6

Specifications

Brand
Diodes Incorporated
Package
U-DFN2020-6 (Type F)
Packaging
—
Weight
—

Total Inventory

287pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how DMN2011UFDF-13 from Diodes Incorporated fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
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Technical Specifications

ManufacturerDiodes Incorporated
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C14.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)1.5V, 4.5V
Rds On (Max) @ Id, Vgs9.5mOhm @ 7A, 4.5V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs56nC @ 10V
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds2248pF @ 10V
FET Feature-
Power Dissipation (Max)2.1W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageU-DFN2020-6 (Type F)
Package / Case6-UDFN Exposed Pad

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Datasheet & Documents

dmn2011ufdf-13.pdf

PDF Document · 7 pages

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