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20V|200mA (Ta)|400mW (Ta)
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MOSFET N-CH 20V 200MA 3-DFN
Specifications
- Brand
- Diodes Incorporated
- Package
- X2-DFN1006-3
- Packaging
- —
- Weight
- —
Total Inventory
238,559pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how DMN2005LP4K-7 from Diodes Incorporated fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Diodes Incorporated | |
| Series | - | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 20V | |
| Current - Continuous Drain (Id) @ 25°C | 200mA (Ta) | |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4V | |
| Rds On (Max) @ Id, Vgs | 1.5Ohm @ 10mA, 4V | |
| Vgs(th) (Max) @ Id | 900mV @ 100µA | |
| Gate Charge (Qg) (Max) @ Vgs | - | |
| Vgs (Max) | ±10V | |
| Input Capacitance (Ciss) (Max) @ Vds | 41pF @ 3V | |
| FET Feature | - | |
| Power Dissipation (Max) | 400mW (Ta) | |
| Operating Temperature | -65°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | X2-DFN1006-3 | |
| Package / Case | 3-XFDFN |
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Datasheet & Documents
dmn2005lp4k-7.pdf
PDF Document · 7 pages
