Heisener Electronics
BOM

DMN10H220LFVW-13

100 V|11A (Tc)|2.4W (Ta), 41W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

MOSFET BVDSS: 61V~100V POWERDI33

Specifications

Brand
Diodes Incorporated
Package
PowerDI3333-8 (SWP) Type UX
Packaging
—
Weight
—

Total Inventory

0pcs

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MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how DMN10H220LFVW-13 from Diodes Incorporated fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerDiodes Incorporated
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C11A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs222mOhm @ 2A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs6.7 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds366 pF @ 50 V
FET Feature-
Power Dissipation (Max)2.4W (Ta), 41W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount, Wettable Flank
Supplier Device PackagePowerDI3333-8 (SWP) Type UX
Package / Case8-PowerVDFN

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