DMN10H170SVTQ-7

100V|2.6A (Ta)|1.2W (Ta)

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MOSFET N-CH 100V 2.6A TSOT26

211pcs

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MOQ: 1 pcs

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Manufacturer	Diodes Incorporated
Series	-
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	2.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	160mOhm @ 5A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	9.7nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1167pF @ 25V
FET Feature	-
Power Dissipation (Max)	1.2W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TSOT-26
Package / Case	SOT-23-6 Thin, TSOT-23-6