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12 V|5A (Ta)|790mW (Ta)
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MOSFET BVDSS: 8V~24V X1-DSN1010-
Specifications
- Brand
- Diodes Incorporated
- Package
- X1-DSN1010-4 (Type B)
- Packaging
- —
- Weight
- —
Total Inventory
0pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how DMN1032UCP4-7 from Diodes Incorporated fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
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Technical Specifications
| Manufacturer | Diodes Incorporated | |
| Series | - | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 12 V | |
| Current - Continuous Drain (Id) @ 25°C | 5A (Ta) | |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V | |
| Rds On (Max) @ Id, Vgs | 28mOhm @ 1A, 10V | |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 3.2 nC @ 4.5 V | |
| Vgs (Max) | ±8V | |
| Input Capacitance (Ciss) (Max) @ Vds | 325 pF @ 6 V | |
| FET Feature | - | |
| Power Dissipation (Max) | 790mW (Ta) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | X1-DSN1010-4 (Type B) | |
| Package / Case | 4-XFBGA, DSBGA |
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