Heisener Electronics
BOM

DMN1008UFDF-7

12V|12.2A (Ta)|700mW (Ta)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

MOSFET N-CH30V SC-59

Specifications

Brand
Diodes Incorporated
Package
U-DFN2020-6 (Type F)
Packaging
—
Weight
—

Total Inventory

351pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how DMN1008UFDF-7 from Diodes Incorporated fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
  • Competitive pricing & global fast delivery
  • Dedicated application engineering support

Technical Specifications

ManufacturerDiodes Incorporated
SeriesAutomotive, AEC-Q101
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)12V
Current - Continuous Drain (Id) @ 25°C12.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Rds On (Max) @ Id, Vgs8mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs23.4nC @ 8V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds995pF @ 6V
FET Feature-
Power Dissipation (Max)700mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageU-DFN2020-6 (Type F)
Package / Case6-UDFN Exposed Pad

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Datasheet & Documents

dmn1008ufdf-7.pdf

PDF Document · 8 pages

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