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30V|1.1A (Ta)|500mW (Ta)
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MOSFET N-CH 30V 1.1A SC59-3
Specifications
- Brand
- Diodes Incorporated
- Package
- SC-59-3
- Packaging
- —
- Weight
- —
Total Inventory
191pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how DMN100-7-F from Diodes Incorporated fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Diodes Incorporated | |
| Series | - | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 30V | |
| Current - Continuous Drain (Id) @ 25°C | 1.1A (Ta) | |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Rds On (Max) @ Id, Vgs | 240mOhm @ 1A, 10V | |
| Vgs(th) (Max) @ Id | 3V @ 1mA | |
| Gate Charge (Qg) (Max) @ Vgs | 5.5nC @ 10V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 150pF @ 10V | |
| FET Feature | - | |
| Power Dissipation (Max) | 500mW (Ta) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | SC-59-3 | |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
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Datasheet & Documents
dmn100-7-f.pdf
PDF Document · 4 pages
