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DMJ70H601SV3

700V|8A (Tc)|125W (Tc)
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MOSFET N-CHANNEL 700V 8A TO251

Specifications

Brand
Diodes Incorporated
Package
TO-251
Packaging
—
Weight
—

Total Inventory

176pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how DMJ70H601SV3 from Diodes Incorporated fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerDiodes Incorporated
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)700V
Current - Continuous Drain (Id) @ 25°C8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs600mOhm @ 2.1A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs20.9nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds686pF @ 50V
FET Feature-
Power Dissipation (Max)125W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-251
Package / CaseTO-251-3 Stub Leads, IPak

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Datasheet & Documents

dmj70h601sv3.pdf

PDF Document · 7 pages

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