Heisener Electronics
BOM

DMJ70H600HCT

700 V|8.5A (Tc)|2.3W (Ta), 104W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

MOSFET BVDSS: 651V~800V TO220AB

Specifications

Brand
Diodes Incorporated
Package
TO-220AB (Type TH)
Packaging
—
Weight
—

Total Inventory

0pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how DMJ70H600HCT from Diodes Incorporated fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerDiodes Incorporated
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)700 V
Current - Continuous Drain (Id) @ 25°C8.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs600mOhm @ 2.4A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs17.4 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds570 pF @ 25 V
FET Feature-
Power Dissipation (Max)2.3W (Ta), 104W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB (Type TH)
Package / CaseTO-220-3

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