Heisener Electronics
BOM

DMJ70H1D3SJ3

700V|4.6A (Tc)|41W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

MOSFET N-CH TO251

Specifications

Brand
Diodes Incorporated
Package
TO-251
Packaging
—
Weight
—

Total Inventory

387pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how DMJ70H1D3SJ3 from Diodes Incorporated fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerDiodes Incorporated
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)700V
Current - Continuous Drain (Id) @ 25°C4.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs1.3Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs13.9nC @ 10V
Vgs (Max)-
Input Capacitance (Ciss) (Max) @ Vds351pF @ 50V
FET Feature-
Power Dissipation (Max)41W (Tc)
Operating Temperature-55°C ~ 155°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-251
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

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