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30V|3.4A, 2.8A|840mW
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MOSFET N/P-CH 30V TSOT23-6
Specifications
- Brand
- Diodes Incorporated
- Package
- SOT-23-6 Thin, TSOT-23-6
- Packaging
- —
- Weight
- —
Total Inventory
175,915pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how DMG6602SVT-7 from Diodes Incorporated fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Diodes Incorporated | |
| Series | - | |
| FET Type | N and P-Channel | |
| FET Feature | Logic Level Gate, 4.5V Drive | |
| Drain to Source Voltage (Vdss) | 30V | |
| Current - Continuous Drain (Id) @ 25°C | 3.4A, 2.8A | |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 3.1A, 10V | |
| Vgs(th) (Max) @ Id | 2.3V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 13nC @ 10V | |
| Input Capacitance (Ciss) (Max) @ Vds | 400pF @ 15V | |
| Power - Max | 840mW | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 | |
| Supplier Device Package | TSOT-23-6 |
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Datasheet & Documents
dmg6602svt-7.pdf
PDF Document · 10 pages
