DMG6602SVT-7

30V|3.4A, 2.8A|840mW

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MOSFET N/P-CH 30V TSOT23-6

175,915个

12小时发货

购买数量

起订量：1 个

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Manufacturer	Diodes Incorporated
Series	-
FET Type	N and P-Channel
FET Feature	Logic Level Gate, 4.5V Drive
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	3.4A, 2.8A
Rds On (Max) @ Id, Vgs	60mOhm @ 3.1A, 10V
Vgs(th) (Max) @ Id	2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	13nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	400pF @ 15V
Power - Max	840mW
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	SOT-23-6 Thin, TSOT-23-6
Supplier Device Package	TSOT-23-6