Heisener Electronics
BOM

DMG4800LSD-13

30V|7.5A|1.17W
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

MOSFET 2N-CH 30V 7.5A 8SO

Specifications

Brand
Diodes Incorporated
Package
8-SOIC (0.154", 3.90mm Width)
Packaging
—
Weight
—

Total Inventory

118,710pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how DMG4800LSD-13 from Diodes Incorporated fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
  • Competitive pricing & global fast delivery
  • Dedicated application engineering support

Technical Specifications

ManufacturerDiodes Incorporated
Series-
FET Type2 N-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C7.5A
Rds On (Max) @ Id, Vgs16mOhm @ 9A, 10V
Vgs(th) (Max) @ Id1.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs8.56nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds798pF @ 10V
Power - Max1.17W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SOP

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Datasheet & Documents

dmg4800lsd-13.pdf

PDF Document · 6 pages

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