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1200V|-|1040W
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IGBT MODULE VCES 1200V 200A
Specifications
- Brand
- Infineon Technologies
- Package
- Module
- Packaging
- —
- Weight
- —
Total Inventory
260pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how DF200R12KE3HOSA1 from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Infineon Technologies | |
| Series | - | |
| IGBT Type | - | |
| Configuration | Single | |
| Voltage - Collector Emitter Breakdown (Max) | 1200V | |
| Current - Collector (Ic) (Max) | - | |
| Power - Max | 1040W | |
| Vce(on) (Max) @ Vge, Ic | 2.15V @ 15V, 200A | |
| Current - Collector Cutoff (Max) | 5mA | |
| Input Capacitance (Cies) @ Vce | 14nF @ 25V | |
| Input | Standard | |
| NTC Thermistor | No | |
| Operating Temperature | -40°C ~ 125°C | |
| Mounting Type | Chassis Mount | |
| Package / Case | Module | |
| Supplier Device Package | Module |
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Datasheet & Documents
df200r12ke3hosa1.pdf
PDF Document · 9 pages
