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800V|1A
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BRIDGE RECT 1PHASE 800V 1A DB
Specifications
- Brand
- GeneSiC Semiconductor
- Package
- 4-EDIP (0.321", 8.15mm)
- Packaging
- —
- Weight
- —
Total Inventory
124pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how DB106G from GeneSiC Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
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- Dedicated application engineering support
Technical Specifications
| Manufacturer | GeneSiC Semiconductor | |
| Series | - | |
| Diode Type | Single Phase | |
| Technology | Standard | |
| Voltage - Peak Reverse (Max) | 800V | |
| Current - Average Rectified (Io) | 1A | |
| Voltage - Forward (Vf) (Max) @ If | 1.1V @ 1A | |
| Current - Reverse Leakage @ Vr | 10µA @ 800V | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Package / Case | 4-EDIP (0.321", 8.15mm) | |
| Supplier Device Package | DB |
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Datasheet & Documents
db107g.pdf
PDF Document · 3 pages
