Heisener Electronics
BOM

D2SB60-D2G

600V|2A
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

BRIDGE RECT 1PHASE 600V 2A GBL

Specifications

Brand
Taiwan Semiconductor Corporation
Package
4-SIP, GBL
Packaging
—
Weight
—

Total Inventory

1,846pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how D2SB60-D2G from Taiwan Semiconductor Corporation fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
  • Competitive pricing & global fast delivery
  • Dedicated application engineering support

Technical Specifications

ManufacturerTaiwan Semiconductor Corporation
Series-
Diode TypeSingle Phase
TechnologyStandard
Voltage - Peak Reverse (Max)600V
Current - Average Rectified (Io)2A
Voltage - Forward (Vf) (Max) @ If1.1V @ 15A
Current - Reverse Leakage @ Vr10µA @ 600V
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / Case4-SIP, GBL
Supplier Device PackageGBL

Recommended Products

SIT9005AIE7G-25SL

SIT9005AIE7G-25SL

MEMS OSC PRG SSXO LVCMOS DS 2.5V

C333C683GAG5TA

C333C683GAG5TA

CAP CER RAD 68NF 250V C0G 2%

1210J1000184MXT

1210J1000184MXT

CAP CER 0.18UF 100V X7R 1210

CPC05GC

CPC05GC

GAUGE VACUUM GAUGE SIG CONDITION

DS1811-10-T-R

DS1811-10-T-R

IC 4.35V O-D 10% TO92-3

116-87-628-41-008101

116-87-628-41-008101

CONN IC DIP SOCKET 28POS GOLD

BCS-107-T-D-PE-BE

BCS-107-T-D-PE-BE

BOX CONNECTOR SOCKET STRIP

554725-2

554725-2

CONN CHAMP INNER FERRULE .300

SIR186LDP-T1-RE3

SIR186LDP-T1-RE3

N-CHANNEL 60-V (D-S) MOSFET POWE

TSZU52C3V0

TSZU52C3V0

603, 150MW, 5%, SMALL SIGNAL ZEN