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Send MessageCUHS10F60-H3F
60V|1A
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount
SMALL-SIGNAL SCHOTTKY BARRIER DI
Specifications
- Brand
- Toshiba Semiconductor and Storage
- Package
- 2-SMD, Flat Lead
- Packaging
- —
- Weight
- —
Total Inventory
496pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how CUHS10F60-H3F from Toshiba Semiconductor and Storage fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Toshiba Semiconductor and Storage | |
| Series | - | |
| Diode Type | Schottky | |
| Voltage - DC Reverse (Vr) (Max) | 60V | |
| Current - Average Rectified (Io) | 1A | |
| Voltage - Forward (Vf) (Max) @ If | - | |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | |
| Reverse Recovery Time (trr) | - | |
| Current - Reverse Leakage @ Vr | 40µA @ 60V | |
| Capacitance @ Vr, F | 130pF @ 0V, 1MHz | |
| Mounting Type | Surface Mount | |
| Package / Case | 2-SMD, Flat Lead | |
| Supplier Device Package | US2H | |
| Operating Temperature - Junction | 150°C (Max) |
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