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25V|20A|6W
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MOSFET 2N-CH 25V 20A 8SON
Specifications
- Brand
- Texas Instruments
- Package
- 8-PowerLDFN
- Packaging
- —
- Weight
- —
Total Inventory
13,615pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how CSD86330Q3D from Texas Instruments fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | - | |
| Series | NexFET™ | |
| FET Type | 2 N-Channel (Half Bridge) | |
| FET Feature | Logic Level Gate | |
| Drain to Source Voltage (Vdss) | 25V | |
| Current - Continuous Drain (Id) @ 25°C | 20A | |
| Rds On (Max) @ Id, Vgs | 9.6mOhm @ 14A, 8V | |
| Vgs(th) (Max) @ Id | 2.1V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 6.2nC @ 4.5V | |
| Input Capacitance (Ciss) (Max) @ Vds | 920pF @ 12.5V | |
| Power - Max | 6W | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Package / Case | 8-PowerLDFN | |
| Supplier Device Package | 8-LSON (3.3x3.3) |
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