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20V|5A|2.3W
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MOSFET 2N-CH 20V 5A 6WSON
Specifications
- Brand
- Texas Instruments
- Package
- 6-WDFN Exposed Pad
- Packaging
- —
- Weight
- —
Total Inventory
12,110pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how CSD85301Q2 from Texas Instruments fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | - | |
| Series | NexFET™ | |
| FET Type | 2 N-Channel (Dual) | |
| FET Feature | Logic Level Gate, 5V Drive | |
| Drain to Source Voltage (Vdss) | 20V | |
| Current - Continuous Drain (Id) @ 25°C | 5A | |
| Rds On (Max) @ Id, Vgs | 27mOhm @ 5A, 4.5V | |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 5.4nC @ 4.5V | |
| Input Capacitance (Ciss) (Max) @ Vds | 469pF @ 10V | |
| Power - Max | 2.3W | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Package / Case | 6-WDFN Exposed Pad | |
| Supplier Device Package | 6-WSON (2x2) |
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