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-|3.9A|700mW
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MOSFET 2P-CH 3.9A 9DSBGA
Specifications
- Brand
- Texas Instruments
- Package
- 9-UFBGA, DSBGA
- Packaging
- —
- Weight
- —
Total Inventory
23,442pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how CSD75207W15 from Texas Instruments fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | - | |
| Series | NexFET™ | |
| FET Type | 2 P-Channel (Dual) | |
| FET Feature | Logic Level Gate | |
| Drain to Source Voltage (Vdss) | - | |
| Current - Continuous Drain (Id) @ 25°C | 3.9A | |
| Rds On (Max) @ Id, Vgs | 162mOhm @ 1A, 1.8V | |
| Vgs(th) (Max) @ Id | 1.1V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 3.7nC @ 4.5V | |
| Input Capacitance (Ciss) (Max) @ Vds | 595pF @ 10V | |
| Power - Max | 700mW | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Package / Case | 9-UFBGA, DSBGA | |
| Supplier Device Package | 9-DSBGA |
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