Heisener Electronics
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CSD25501F3T

20V|3.6A (Ta)|500mW (Ta)
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20-V P-CHANNEL FEMTOFET MOSFET

Specifications

Brand
Texas Instruments
Package
3-LGA (0.73x0.64)
Packaging
—
Weight
—

Total Inventory

4,707pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how CSD25501F3T from Texas Instruments fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

Manufacturer-
SeriesFemtoFET™
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C3.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Rds On (Max) @ Id, Vgs76mOhm @ 400mA, 4.5V
Vgs(th) (Max) @ Id1.05V @ 250µA
Gate Charge (Qg) (Max) @ Vgs1.33nC @ 4.5V
Vgs (Max)-20V
Input Capacitance (Ciss) (Max) @ Vds385pF @ 10V
FET Feature-
Power Dissipation (Max)500mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package3-LGA (0.73x0.64)
Package / Case3-XFLGA

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