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20V|3.2A (Ta)|1W (Ta)
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MOSFET P-CH 20V 3.2A 6DSBGA
Specifications
- Brand
- Texas Instruments
- Package
- 6-DSBGA (1x1.5)
- Packaging
- —
- Weight
- —
Total Inventory
177pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how CSD25211W1015 from Texas Instruments fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
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Technical Specifications
| Manufacturer | - | |
| Series | NexFET™ | |
| FET Type | P-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 20V | |
| Current - Continuous Drain (Id) @ 25°C | 3.2A (Ta) | |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V | |
| Rds On (Max) @ Id, Vgs | 33mOhm @ 1.5A, 4.5V | |
| Vgs(th) (Max) @ Id | 1.1V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 4.1nC @ 4.5V | |
| Vgs (Max) | -6V | |
| Input Capacitance (Ciss) (Max) @ Vds | 570pF @ 10V | |
| FET Feature | - | |
| Power Dissipation (Max) | 1W (Ta) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | 6-DSBGA (1x1.5) | |
| Package / Case | 6-UFBGA, DSBGA |
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