Heisener Electronics
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CSD23202W10

12V|2.2A (Ta)|1W (Ta)
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MOSFET P-CH 12V 2.2A 4DSBGA

Specifications

Brand
Texas Instruments
Package
4-DSBGA (1x1)
Packaging
—
Weight
—

Total Inventory

227,992pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how CSD23202W10 from Texas Instruments fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

Manufacturer-
SeriesNexFET™
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)12V
Current - Continuous Drain (Id) @ 25°C2.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)1.5V, 4.5V
Rds On (Max) @ Id, Vgs53mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs3.8nC @ 4.5V
Vgs (Max)-6V
Input Capacitance (Ciss) (Max) @ Vds512pF @ 6V
FET Feature-
Power Dissipation (Max)1W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package4-DSBGA (1x1)
Package / Case4-UFBGA, DSBGA

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