Heisener Electronics
BOM

CSD19538Q3AT

100V|15A (Ta)|2.8W (Ta), 23W (Tc)
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MOSFET N-CH 100V 15A VSONP

Specifications

Brand
Texas Instruments
Package
8-VSONP (3x3.15)
Packaging
—
Weight
—

Total Inventory

45,126pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how CSD19538Q3AT from Texas Instruments fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

Manufacturer-
SeriesNexFET™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C15A (Ta)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs59mOhm @ 5A, 10V
Vgs(th) (Max) @ Id3.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs4.3nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds454pF @ 50V
FET Feature-
Power Dissipation (Max)2.8W (Ta), 23W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-VSONP (3x3.15)
Package / Case8-PowerVDFN

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