Heisener Electronics
BOM

CSD19538Q2T

100V|13.1A (Tc)|2.5W (Ta), 20.2W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

MOSFET NCH 100V 13.1A 6WSON

Specifications

Brand
Texas Instruments
Package
6-WSON (2x2)
Packaging
—
Weight
—

Total Inventory

3,982pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how CSD19538Q2T from Texas Instruments fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

Manufacturer-
SeriesNexFET™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C13.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs59mOhm @ 5A, 10V
Vgs(th) (Max) @ Id3.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs5.6nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds454pF @ 50V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 20.2W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package6-WSON (2x2)
Package / Case6-WDFN Exposed Pad

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