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CSD19535KCS

100V|150A (Ta)|300W (Tc)
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MOSFET N-CH 100V TO-220

Specifications

Brand
Texas Instruments
Package
TO-220-3
Packaging
—
Weight
—

Total Inventory

8,332pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how CSD19535KCS from Texas Instruments fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

Manufacturer-
SeriesNexFET™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C150A (Ta)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs3.6mOhm @ 100A, 10V
Vgs(th) (Max) @ Id3.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs101nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds7930pF @ 50V
FET Feature-
Power Dissipation (Max)300W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220-3
Package / CaseTO-220-3

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