Heisener Electronics
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CSD19506KTT

80V|200A (Ta)|375W (Tc)
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MOSFET N-CH 80V 200A DDPAK-3

Specifications

Brand
Texas Instruments
Package
DDPAK/TO-263-3
Packaging
—
Weight
—

Total Inventory

410pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how CSD19506KTT from Texas Instruments fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

Manufacturer-
SeriesNexFET™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)80V
Current - Continuous Drain (Id) @ 25°C200A (Ta)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs2.3mOhm @ 100A, 10V
Vgs(th) (Max) @ Id3.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs156nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds12200pF @ 40V
FET Feature-
Power Dissipation (Max)375W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDDPAK/TO-263-3
Package / CaseTO-263-4, D²Pak (3 Leads + Tab), TO-263AA

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