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40V|110A (Ta), 194A (Tc)|188W (Ta)
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40-V N-CHANNEL NEXFET POWER MOS
Specifications
- Brand
- Texas Instruments
- Package
- DDPAK/TO-263-3
- Packaging
- —
- Weight
- —
Total Inventory
733pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how CSD18511KTTT from Texas Instruments fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
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Technical Specifications
| Manufacturer | - | |
| Series | NexFET™ | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 40V | |
| Current - Continuous Drain (Id) @ 25°C | 110A (Ta), 194A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Rds On (Max) @ Id, Vgs | 2.6mOhm @ 100A, 10V | |
| Vgs(th) (Max) @ Id | 2.4V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 64nC @ 10V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 5940pF @ 20V | |
| FET Feature | - | |
| Power Dissipation (Max) | 188W (Ta) | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | DDPAK/TO-263-3 | |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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