Heisener Electronics
BOM

CSD17313Q2T

30V|5A (Ta)|2.4W (Ta), 17W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

MOSFET N-CH 30V 5A

Specifications

Brand
Texas Instruments
Package
6-WSON (2x2)
Packaging
—
Weight
—

Total Inventory

3,684pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how CSD17313Q2T from Texas Instruments fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

Manufacturer-
SeriesNexFET™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)3V, 8V
Rds On (Max) @ Id, Vgs30mOhm @ 4A, 8V
Vgs(th) (Max) @ Id1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs2.7nC @ 4.5V
Vgs (Max)+10V, -8V
Input Capacitance (Ciss) (Max) @ Vds340pF @ 15V
FET Feature-
Power Dissipation (Max)2.4W (Ta), 17W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package6-WSON (2x2)
Package / Case6-WDFN Exposed Pad

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