Heisener Electronics
BOM

CSD16411Q3T

25 V|50A (Tc)|35W (Tc)
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PROTOTYPE

Specifications

Brand
Texas Instruments
Package
8-VSON-CLIP (3.3x3.3)
Packaging
—
Weight
—

Total Inventory

0pcs

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MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how CSD16411Q3T from Texas Instruments fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerTexas Instruments
SeriesNexFET™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)25 V
Current - Continuous Drain (Id) @ 25°C50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs10mOhm @ 10A, 10V
Vgs(th) (Max) @ Id2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs3.8 nC @ 4.5 V
Vgs (Max)+16V, -12V
Input Capacitance (Ciss) (Max) @ Vds570 pF @ 12.5 V
FET Feature-
Power Dissipation (Max)35W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-VSON-CLIP (3.3x3.3)
Package / Case8-PowerTDFN

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