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25 V|21A (Ta), 100A (Tc)|3W (Ta)
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PROTOTYPE
Specifications
- Brand
- Texas Instruments
- Package
- 8-VSON (5x6)
- Packaging
- —
- Weight
- —
Total Inventory
0pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how CSD16342Q5AT from Texas Instruments fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
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Technical Specifications
| Manufacturer | Texas Instruments | |
| Series | NexFET™ | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 25 V | |
| Current - Continuous Drain (Id) @ 25°C | 21A (Ta), 100A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 8V | |
| Rds On (Max) @ Id, Vgs | 4.7mOhm @ 20A, 8V | |
| Vgs(th) (Max) @ Id | 1.1V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 7.1 nC @ 4.5 V | |
| Vgs (Max) | +10V, -8V | |
| Input Capacitance (Ciss) (Max) @ Vds | 1350 pF @ 12.5 V | |
| FET Feature | - | |
| Power Dissipation (Max) | 3W (Ta) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | 8-VSON (5x6) | |
| Package / Case | 8-PowerTDFN |
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