Heisener Electronics
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CSD13303W1015

12V|31A (Ta)|1.65W (Ta)
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MOSFET N-CH 12V 31A 6DSBGA

Specifications

Brand
Texas Instruments
Package
6-DSBGA
Packaging
—
Weight
—

Total Inventory

117pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how CSD13303W1015 from Texas Instruments fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

Manufacturer-
SeriesNexFET™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)12V
Current - Continuous Drain (Id) @ 25°C31A (Ta)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Rds On (Max) @ Id, Vgs20mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs4.7nC @ 4.5V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds715pF @ 6V
FET Feature-
Power Dissipation (Max)1.65W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package6-DSBGA
Package / Case6-UFBGA, DSBGA

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