Heisener Electronics
BOM

C3M0065100K

1000V|35A (Tc)|113.5W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

1000V, 65 MOHM, G3 SIC MOSFET

Specifications

Brand
Cree/Wolfspeed
Package
TO-247-4L
Packaging
—
Weight
—

Total Inventory

4,516pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how C3M0065100K from Cree/Wolfspeed fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerCree/Wolfspeed
SeriesC3M™
FET TypeN-Channel
TechnologySiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)1000V
Current - Continuous Drain (Id) @ 25°C35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)15V
Rds On (Max) @ Id, Vgs78mOhm @ 20A, 15V
Vgs(th) (Max) @ Id3.5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs35nC @ 15V
Vgs (Max)+19V, -8V
Input Capacitance (Ciss) (Max) @ Vds660pF @ 600V
FET Feature-
Power Dissipation (Max)113.5W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247-4L
Package / CaseTO-247-4

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