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BU323Z

350V|10A|150W
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TRANS NPN DARL 350V 10A TO-218

Specifications

Brand
ON Semiconductor
Package
TO-218-3
Packaging
—
Weight
—

Total Inventory

432pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how BU323Z from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
  • Competitive pricing & global fast delivery
  • Dedicated application engineering support

Technical Specifications

ManufacturerON Semiconductor
Series-
Transistor TypeNPN - Darlington
Current - Collector (Ic) (Max)10A
Voltage - Collector Emitter Breakdown (Max)350V
Vce Saturation (Max) @ Ib, Ic1.7V @ 250mA, 10A
Current - Collector Cutoff (Max)100µA
DC Current Gain (hFE) (Min) @ Ic, Vce500 @ 5A, 4.6V
Power - Max150W
Frequency - Transition2MHz
Operating Temperature-65°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-218-3
Supplier Device PackageSOT-93

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Datasheet & Documents

bu323z.pdf

PDF Document · 8 pages

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Datasheet Preview

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