Heisener Electronics
BOM

BSZ031NE2LS5ATMA1

25V|19A (Ta), 40A (Tc)|2.1W (Ta), 30W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

MOSFET N-CH 25V 19A 8SON

Specifications

Brand
Infineon Technologies
Package
PG-TSDSON-8-FL
Packaging
—
Weight
—

Total Inventory

288pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how BSZ031NE2LS5ATMA1 from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)25V
Current - Continuous Drain (Id) @ 25°C19A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs3.1mOhm @ 20A, 10V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs18.3nC @ 10V
Vgs (Max)±16V
Input Capacitance (Ciss) (Max) @ Vds1230pF @ 12V
FET Feature-
Power Dissipation (Max)2.1W (Ta), 30W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TSDSON-8-FL
Package / Case8-PowerTDFN

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